SSM3K341R datasheet(3/9 Pages) TOSHIBA

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SSM3K341R

6. Electrical Characteristics

6.1. Static Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

(Note 1)

(Note 2)

(Note 3)

Symbol

IGSS

IDSS

V(BR)DSS

V(BR)DSX

Vth

RDS(ON)

Test Condition

VGS = ±16 V

VDS = 60 V

ID = 10 mA, VGS = 0 V

ID = 10 mA, VGS = -20 V

VDS = 10 V, ID = 0.1 mA

ID = 2 A, VGS = 4 V

ID = 3 A, VGS = 4.5 V

ID = 5 A, VGS = 10 V

Min

�

1.5

�

Typ.

�

Max

±10

�

2.5

Unit

µA

mΩ

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

Ciss

Crss

Coss

ton

toff

Test Condition

VDS = 10 V, VGS = 0 V,

f = 1 MHz

VDD = 30 V, ID = 3 A,

VGS = 0 to 4.5 V, RG = 50 Ω

Duty ≤ 1 %,Input: tr, tf < 5 ns,

Common source,

See Chapter 6.3.

Min

�

Typ.

550

300

Max

�

Unit

6.3. Switching Time Test Circuit

Fig. 6.3.1

Switching Time Test Circuit

Fig. 6.3.2

Input Waveform/Output Waveform

6.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Qgs1

Qgd

Test Condition

VDD = 48 V, ID = 2 A,

VGS = 10 V

Min

�

Typ.

9.3

1.8

2.0

Max

�

Unit

2021-02-03

Rev.8.0

Toshiba Electronic Devices & Storage Corporation

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