2

N-Channel MOSFET Transistor

ISCNH060D

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Drain-Source Breakdown Voltage

100

--

--

V

Gate Threshold Voltage

2

--

4

V

Drain-Source On-Resistance

--

--

6.0

mΩ

Gate-Body Leakage Current

--

--

±

0.1

uA

Zero Gate Voltage Drain Current

--

--

1

uA

Forward On-Voltage

--

--

1.2

V

NOTICE：

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notification. The information contained herein is presented only as a guide for the applications of

our products.

Our products are intended for usage in general electronic equipment. The products are not

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