Features

IPS031R

FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD60220

Description

The IPS031R are fully protected three terminal SMART

POWER MOSFETs that feature over-current, over-tem-

perature, ESD protection and drain to source active

clamp.These devices combine a HEXFET® POWER

MOSFET and a gate driver. They offer full protection

and high reliability required in harsh environments.

The driver allows short switching times and provides

efficient protection by turning OFF the power MOSFET

when the temperature exceeds 165

drain current reaches 14A. The device restarts once the

input is cycled. The avalanche capability is significantly

enhanced by the active clamp and covers most induc-

tive load demagnetizations.

Product Summary

60m

Ω (max)

50V

14A

1.5

µs

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1

Package

Typical Connection

(Refer to lead assignment for correct pin configuration)

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Load

D

S

control

IN

R in series

(if needed)

Logic signal