ISC080N10NM6 datasheet(1/12 Pages) INFINEON

Part #	ISC080N10NM6

Description	OptiMOSTM 6 Power-Transistor, 100 V

PDF	12 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1

ISC080N10NM6

Rev.2.0,2021-07-05

Final Data Sheet

1

2

3

4

5

6

7

8

4

3

2

1

5

6

7

8

TDSON-8FL(enlargedsourceinterconnection)

Drain

Pin 5-8

Gate

Pin 4

Source

Pin 1-3

*1

*1: Internal body diode

MOSFET

OptiMOSTM6Power-Transistor,100V

Features

•N-channel,normallevel

•Verylowon-resistanceRDS(on)

•ExcellentgatechargexRDS(on)product(FOM)

•Verylowreverserecoverycharge(Qrr)

•Highavalancheenergyrating

•175°Coperatingtemperature

•Optimizedforhighfrequencyswitchingandsynchronousrectification

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

•MSL1classifiedaccordingtoJ-STD-020

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

100

V

RDS(on),max

8.05

m

Ω

ID

75

A

Qoss

35

nC

QG(0V...10V)

19

nC

Qrr(100A/µs)

31

nC

Type/OrderingCode

Package

Marking

RelatedLinks

ISC080N10NM6

PG-TDSON-8 FL

080N10N6

-

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