ART1K6FHSU datasheet(6/18 Pages) AMPLEON

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ART1K6FH_1K6FHS_1K6FHG

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Product data sheet

Rev. 2 — 22 March 2022

6 of 18

ART1K6FH(S)(G)

Power LDMOS transistor

Test information

7.1 Ruggedness in class-AB operation

The ART1K6FH, ART1K6FHS and ART1K6FHG are capable of withstanding a load

mismatch corresponding to VSWR

 65 : 1 through all phases under the following

conditions: PL = 1400 W pulsed at VDS = 50 V and PL = 1600 W pulsed at VDS =55V;

IDq = 100 mA per section; tp =100 s;  =10%; f=108MHz.

7.2 Impedance information

Table 8.

RF characteristics

Test signal: pulsed RF; tp =100 s;  = 5 %; f = 108 MHz; RF performance at VDS =55 V;

IDq = 50 mA per section; Tcase =25 C; unless otherwise specified; in a class-AB production test

circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 1600 W

28.0

RLin

input return loss

PL = 1600 W

16



drain efficiency

PL = 1600 W

Fig 3.

Definition of transistor impedance

Table 9.

Typical push-pull impedance

Simulated Zi and ZL device impedance.

(MHz)

(

)

(

)

(W)

VDS =50V

108

2.4

 j8.7

3.3 + j0.7

1400

VDS =55V

108

2.4

 j8.7

3.5 + j0.8

1600

amp01314

gate 1

gate 2

drain 2

drain 1

ART1K6FHSU Datasheet(PDF) 6 Page - Ampleon Netherlands B.V.

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