BLF645#2

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© Ampleon The Netherlands B.V. 2015. All rights reserved.

Product data sheet

Rev. 2 — 1 September 2015

2 of 14

BLF645

Broadband power LDMOS transistor

1.3 Applications



Communication transmitter applications in the HF to 1400 MHz frequency range



Industrial applications in the HF to 1400 MHz frequency range

2. Pinning information

[1]

Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

[1]

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain 1

2drain 2

3gate 1

4gate2

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF645

-

flanged balanced LDMOST ceramic package; 2

mounting holes; 4 leads

SOT540A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+11

V

drain current

-

32

A

storage temperature

65

+150

C

junction temperature

-

200

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ Unit

thermal resistance from junction to case

[1] 0.67 K/W