BLM2425M7S60P

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© Ampleon Netherlands B.V. 2018. All rights reserved.

Product data sheet

Rev. 5 — 13 September 2018

4 of 13

BLM2425M7S60P

LDMOS 2-stage power MMIC

6. Thermal characteristics

[1]

When operated with a CW signal.

7. Characteristics

Table 5.

Thermal characteristics

Measured for total device.

Symbol Parameter

Conditions

Value Unit

thermal resistance from

junction to case

[1] 0.91

K/W

Table 6.

DC characteristics

°C; per section unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

Final stage

65

-

-

V

gate-source threshold voltage

1.5

1.9

2.3

V

gate-source quiescent voltage

1.7

2.1

2.5

V

drain leakage current

-

-

1.4

A

drain cut-off current

-

7.8

-

A

gate leakage current

-

-

140 nA

forward transconductance

-

2.85 -

S

-

350

-

m



quiescent drain current

208 233

257 mA

Driver stage

65

-

-

V

gate-source threshold voltage

1.4

1.9

2.4

V

gate-source quiescent voltage

1.7

2.1

2.5

V

drain leakage current

-

-

1.4

A

drain cut-off current

-

2.2

-

A

gate leakage current

-

-

140 nA

forward transconductance

-

0.8

-

S

-

2350 -

m



quiescent drain current

67

75

83

mA