BLM2425M9S20Z datasheet(4/13 Pages) AMPLEON

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BLM2425M9S20

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Product data sheet

Rev. 2 — 17 May 2021

4 of 13

BLM2425M9S20

LDMOS 2-stage power MMIC

Characteristics

Table 6.

DC characteristics

Symbol

Parameter

Conditions

Min Typ

Max Unit

Final stage

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.181 mA

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 18.1 mA

1.5

1.9

2.5

VGSq

gate-source quiescent voltage

VDS = 32 V; ID = 20 mA

1.4

1.8

2.4

IDSS

drain leakage current

VGS =0V; VDS =32 V

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS = 10 V

-3.65

IGSS

gate leakage current

VGS =11V; VDS =0V

140

gfs

forward transconductance

VDS =10V; ID =633 mA

1.33

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =0.63 A

630



Driver stage

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.037 mA

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 3.7 mA

1.5

1.9

2.5

VGSq

gate-source quiescent voltage

VDS = 32 V; ID = 10 mA

1.4

1.9

2.4

IDSS

drain leakage current

VGS =0V; VDS =32 V

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS = 10 V

-0.74

IGSS

gate leakage current

VGS =11V; VDS =0V

140

gfs

forward transconductance

VDS =10V; ID = 130 mA

0.264 -

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =0.4 A

2350



Table 7.

RF Characteristics

Test signal: CW pulsed; tp =100 s;  = 10 %; at f = 2450 MHz; RF performance at VDS = 32 V;

IDq1 = 10 mA; IDq2 =20 mA; Tcase =25 C; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 20 W

25.5

PAE

power-added efficiency

PL = 20 W

4245-

RLin

input return loss

PL = 20 W

13

BLM2425M9S20Z Datasheet(PDF) 4 Page - Ampleon Netherlands B.V.

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