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SS3P3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SS3P3 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() SS3P3 www.vishay.com Vishay General Semiconductor Revision: 08-Mar-2022 1 Document Number: 88944 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface-Mount Schottky Barrier Rectifiers LINKS TO ADDITIONAL RESOURCES FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 30 V IFSM 50 A EAS 11.25 mJ VF 0.43 V TJ max. 150 °C Package SMP (DO-220AA) Circuit configuration Single SMP (DO-220AA) eSMP® Series Cathode Anode 333 DDD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS3P3 UNIT Device marking code 33 Maximum repetitive peak reverse voltage VRRM 30 V Maximum average forward rectified current (fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG -55 to +150 °C |
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