NVMFS021N10MCL datasheet(2/8 Pages) ONSEMI

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NVMFS021N10MCL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

100

−

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

−

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 100 V

TJ = 25 °C

−

1.0

TJ = 125°C

−

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

−

100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 42 mA

−

Threshold Temperature Coefficient

VGS(TH)/TJ

−

−5.4

−

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 7 A

−

VGS = 4.5 V

ID = 6 A

−

Forward Transconductance

gFS

VDS = 10 V, ID = 7 A

−

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 50 V

−

850

−

Output Capacitance

COSS

−

310

−

Reverse Transfer Capacitance

CRSS

−

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 50 V; ID = 6 A

−

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 50 V; ID = 7 A

−

Threshold Gate Charge

QG(TH)

VGS = 10 V, VDS = 50 V; ID = 7 A

−

Gate−to−Source Charge

QGS

−

2.4

−

Gate−to−Drain Charge

QGD

−

1.7

−

Plateau Voltage

VGP

−

2.8

−

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 50 V,

ID = 7 A, RG = 6.0 W

−

6.4

−

Rise Time

−

2.4

−

Turn−Off Delay Time

td(OFF)

−

Fall Time

−

3.3

−

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 7 A, TJ = 25 °C

−

0.83

1.3

VGS = 0 V, IS = 7 A, TJ = 125 °C

−

0.71

−

Reverse Recovery Time

tRR

VGS = 0 V, dlS/dt = 100 A/ms, IS = 4 A

−

Reverse Recovery Charge

QRR

−

Charge Time

−

14.8

−

Discharge Time

−

14.2

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Switching characteristics are independent of operating junction temperatures.

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