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BAT41 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAT41 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 3 page  BAT41 www.vishay.com Vishay Semiconductors Rev. 1.9, 16-Nov-2021 1 Document Number: 85659 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode LINKS TO ADDITIONAL RESOURCES FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a MiniMELF case with type designation LL41 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Pulse test, tp = 300 μs 333 DDD3 D 3D Models PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT41 BAT41-TR or BAT41-TAP Single BAT41 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 100 V Forward continuous current (1) IF 100 mA Repetitive peak forward current (1) tp < 1 s, δ < 0.5 IFRM 350 mA Surge forward current (1) tp = 10 ms IFSM 750 mA Power dissipation (1) Tamb = 65 °C Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air Valid provided that electrodes are kept at ambient temperature RthJA 300 K/W Junction temperature Tj 125 °C Ambient operating temperature range Tamb -65 to +125 °C Storage temperature range Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage (1) IR = 100 μA V(BR) 100 110 V Leakage current (1) VR = 50 V, Tj = 25 °C IR 100 nA VR = 50 V, Tj = 100 °C IR 20 μA Forward voltage (1) IF = 1 mA VF 400 450 mV IF = 200 mA VF 1000 mV Diode capacitance VR = 1 V, f = 1 MHz CD 2pF |
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