NVMJS1D7N06C

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

23

mV/°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Threshold Temperature Coefficient

−7.8

mV/°C

Drain−to−Source On Resistance

1.3

1.68

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

4870

pF

Output Capacitance

3505

Reverse Transfer Capacitance

22

Total Gate Charge

61

nC

Threshold Gate Charge

13

Gate−to−Source Charge

21

Gate−to−Drain Charge

7.8

Plateau Voltage

4.6

V

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

20

ns

Rise Time

10

Turn−Off Delay Time

42

Fall Time

11

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.8

1.2

V

0.67

Reverse Recovery Time

69

ns

Charge Time

37

Discharge Time

32

Reverse Recovery Charge

111

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Switching characteristics are independent of operating junction temperatures.