ACE11011B datasheet(1/8 Pages) ACE

Part #	ACE11011B

Description	N-Channel Enhancement Mode Power MOSFET

PDF	8 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE11011B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description



Notebook AC-in load switch



Battery protection charge/discharge

Features



VDS=100V



ID=83A



RDS(ON)@VGS=10V,TYP 4.3

mΩ



RDS(ON)@VGS=6V,TYP 5.2

mΩ



RDS(ON)@VGS=4.5V,TYP 6.8

mΩ

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Units

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Drain Current(Continuous)

*AC

TC=25℃

ID

83

A

TC=70℃

66.1

Drain Current(Pulsed)

*B

IDM

200

A

Power Dissipation

TC=25℃

PD

83

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

Note :

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

C.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Units

Maximum Junction-to-Ambient

t ≤ 10 s

R

thJA

18

23

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R

thJC

1

1.5

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ACE11011B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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