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ACE11760B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

Part # ACE11760B
Description  N-Channel Enhancement Mode Power MOSFET
PDF  3 Pages
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Manufacturer  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE11760B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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ACE11760B
N-Channel Enhancement Mode Power MOSFET
VER 1.1
1
Description
⚫
load switching
⚫
use in PWM
⚫
general purpose applications
Features
⚫
VDS=60V, ID=50A
⚫
RDS(ON)1@VGS = 10V, TYP 11mΩ
⚫
RDS(ON)2@VGS = 4.5V, TYP 16mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25℃
ID
50
A
TA=100℃
40.6
Drain Current (Pulsed)*B
IDM
100
A
Power Dissipation
TA=25℃
PD
113.6
W
Operating temperature / storage temperature
TJ/TSTG
-55~150
°C
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current r
ating is based on the t≤ 10s junction to ambient thermal resistance rating.
Thermal Resistance Ratings
Parameter
Symbol
Maximum
Unit
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.1
°C/W


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