ACE17313B datasheet(1/3 Pages) ACE

Part #	ACE17313B

Description	N-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE17313B

N-Channel Enhancement Mode Power MOSFET

VER 1.2

1

Description

ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load switching and general-purpose applications.

Features

⚫

VDS=30V

⚫

ID=100A

⚫

RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ

⚫

RDS(ON)@VGS=4.5V, IDS=10A, TYP 5.2mΩ

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Units

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current(Continuous) *AC

TC=25℃

ID

100

A

TC=100℃

60

Drain Current (Pulse) *B

IDM

200

A

Power Dissipation

TC=25℃

PD

78

W

TC=100℃

31

Single Pulse Avalanche Energy

L=1mH, IAS=19A, TJ=25°C

EAS

180

mJ

Operating temperature / storage temperature

TJ/TSTG

-55~150

°C

Note :

a.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

b. Repetitive rating, pulse width limited by junction temperature.

c. The current rating is based on the

t≤ 10s junction to ambient thermal resistance rating

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

t ≤ 10 s

RthJA

40

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.6

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ACE17313B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE17313B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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