QPD1025LEVB2 datasheet(4/26 Pages) QORVO

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Data Sheet Rev. L, March 2022

4 of 26

www.qorvo.com

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

RF Characterization

– 1.0 – 1.1 GHz EVB1 Performance at 1.05 GHz 1

Parameter

Min

Typ

Max

Units

Linear Gain, GLIN

–

21.2

–

Output Power at 3dB compression point, P3dB

–

1461

–

Drain Efficiency at 3dB compression point, DEFF3dB

–

73.2

–

Gain at 3dB compression point, G3dB

–

18.2

–

Gate Leakage

VD = +10 V, VG = −3.3 V

-25 2

–

Notes:

= 65 V, IDQ = 1.5 A (combined), Temp = +25 °C, Pulse Width = 100 us, Duty Cycle = 10%

Gate Leakage per path

RF Characterization

– 0.96 – 1.215 GHz EVB2 Performance 1

Parameter

0.96 GHz

1.08 GHz

1.2GHz

Units

Linear Gain, GLIN

19.5

19.6

Output Power at 2dB compression point, P2dB

1800

1678

1570

Drain Efficiency at 2dB compression point, DEFF2dB

Gain at 2dB compression point, G2dB

17.5

17.6

Notes:

VD = 65

V, IDQ = 1.5 A (combined), Temp = +25 °C, Pulse Width = 100 us, Duty Cycle = 10%

RF Characterization

– Mismatch Ruggedness at 1.0 GHz 1, 2, 3

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Notes

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 1.5 A (combined)

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector

Pulse: 100us, 10% Duty cycle

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