 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
6604 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
|
|
|||||||||||||||||||||||||||||
6604 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
|
|
2 / 9 page  Symbol Min Typ Max Units BVDSS 20 V VDS=20V, VGS=0V 1 IGSS ±100 nA VGS(th) Gate Threshold Voltage 0.4 0.7 1 V ID(ON) 13 A 51 65 58 75 m Ω 68 100 m Ω gFS 16 S VSD 0.7 1 V IS 1.5 A Ciss 205 260 320 pF Coss 33 48 63 pF Crss 16 27 38 pF Rg 1.5 3 4.5 Ω Qg(4.5V) 2.9 3.8 nC Qgs 0.4 nC Qgd 0.6 nC tD(on) 2.5 ns tr 3.2 ns tD(off) 21 ns Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=4.5V, VDS=5V VGS=4.5V, ID=3.4A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V VDS=5V, ID=3.4A VGS=2.5V, ID=3A VGS=1.8V, ID=2A RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±8V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=3.4A Gate Source Charge Gate Drain Charge Total Gate Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=5V, VDS=10V, RL=2.95Ω, RGEN=3Ω tD(off) 21 ns tf 3 ns trr 14 19 ns Qrr 3.8 nC IF=3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Turn-Off Fall Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs Turn-Off DelayTime RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. 6604 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD www.sztuofeng.com 2 Jan 2019 V1.1 N and P-Channel Enhancement Mode Power MOSFET |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
