MIC4424-YN datasheet(15/26 Pages) MICROCHIP

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2022 Microchip Technology Inc. and its subsidiaries

DS20006638A-page 15

MIC4423/4/5

The actual junction temperature will be lower than

calculated both because duty cycle is less than 100%

and because the graph lists RDS(ON) at a TJ of 125°C

and the RDS(ON) at 61°C TJ will be somewhat lower.

4.12 Definitions

CL = Load Capacitance in Farads.

D = Duty Cycle expressed as the fraction of time the

input to the driver is high.

f = Operating Frequency of the driver in Hertz.

IH = Power supply current drawn by a driver when both

inputs are high and neither output is loaded.

IL = Power supply current drawn by a driver when both

inputs are low and neither output is loaded.

ID = Output current from a driver in Amps.

PD = Total power dissipated in a driver in Watts.

PL = Power dissipated in the driver due to the driver’s

load in Watts.

PQ = Power dissipated in a quiescent driver in Watts.

PT = Power dissipated in a driver when the output

changes states (“shoot-through current”) in Watts.

NOTE: The “shoot-through” current from a dual

transition (once up, once down) for both drivers is

stated in the graph on the following page in ampere-

nanoseconds. This ﬁgure must be multiplied by the

number of repetitions per second (frequency to ﬁnd

Watts).

RO = Output resistance of a driver in Ohms.

VS = Power supply voltage to the IC in Volts.

FIGURE 4-1:

Crossover Energy Loss.

FIGURE 4-2:

Power Dissipation vs.

Ambient Temperature.

02468 10 12 14 16 18

10-8

10-9

10-10

250

500

750

1000

1250

100

125

150

AMBIENT TEMPERATURE (°C)

SOIC

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