MBRF1090CT-M3 datasheet(2/5 Pages) VISHAY

2 / 5 page

MBRF1090CT-M3, MBRF10100CT-M3

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Vishay General Semiconductor

Revision: 19-Mar-18

Document Number: 89126

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Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms



RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

MBRF1090CT

MBRF10100CT

UNIT

Maximum instantaneous forward voltage

per diode (1)

IF = 5.0 A

TC = 125 °C

0.75

IF = 5.0 A

TC = 25 °C

0.85

Maximum reverse current per diode at

working peak reverse voltage (2)

TJ = 25 °C

100

μA

TJ = 100 °C

6.0

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBRF1090CT

MBRF10100CT

UNIT

Typical thermal resistance per diode

RJC

6.8

°C/W

ORDERING INFORMATION (EXAMPLE)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ITO-220AB

MBRF10100CT-M3/4W

1.75

50/tube

Tube

050

100

125

150

175

Case Temperature (°C)

Resistive or Inductive Load

Mounted on Specific Heatsink

100

120

100

J = TJ Max.

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

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