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MI2060C Datasheet(PDF) 2 Page - Vishay Siliconix |
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MI2060C Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() MI2050C, MI2060C www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 2 Document Number: 89007 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge pCurrent Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT Maximum instantaneous forward voltage per diode VF (1) IF = 5 A TJ = 25 °C 0.554 - V IF = 10 A TJ = 125 °C 0.649 0.74 IF = 5 A TJ = 25 °C 0.484 - IF = 10 A TJ = 125 °C 0.570 0.62 Reverse current per diode IR (2) rated VR TJ = 25 °C 15 150 μA TJ = 100 °C 10.8 25 mA Typical junction capacitance CJ 4.0 V, 1 MHz 300 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MI2050C MI2060C UNIT Typical thermal resistance per diode R JC 2.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-262AA MI2060C-E3/4W 1.456 4W 50/tube Tube 0 4 8 12 20 0 50 100 150 16 Resistive or Inductive Load Case Temperature (°C) 60 40 80 140 120 100 160 1 100 10 T J = TJ Max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz |
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