© Semiconductor Components Industries, LLC, 2007

January, 2021 − Rev. 2

1

Publication Order Number:

BAS40P2/D

Schottky Barrier Diodes

BAS40P2

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

40

V

Forward Power Dissipation

Derate above 25°C

225

1.8

mW

mW/°C

Operating Junction and Storage

Temperature Range

°C

Forward Continuous Current

120

mA

Forward Surge Current

t v 1 s

t v 10 ms

200

600

mA

Thermal Resistance (Note 1)

Junction−to−Ambient (Note 2)

508

311

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−4 @ minimum pad.

2. FR−4 @ 1.0 x 1.0 in pad.

www.onsemi.com

Device

Package

ORDERING INFORMATION

BAS40P2T5G

SOD−923

(Pb−Free)

8000/Tape & Reel

SOD−923

CASE 514AB

1

2

1

CATHODE

2

ANODE

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

AD = Specific Device Code

M = Date Code

MARKING

DIAGRAM

ADM

12

40 VOLTS

SCHOTTKY BARRIER DIODES