© Semiconductor Components Industries, LLC, 2018

November, 2019 − Rev. 1

1

Publication Order Number:

ESDL2012/D

ESDL2012

ESD Protection Diode

Micro−Packaged Diodes for ESD Protection

The ESDL2012 is designed to protect voltage sensitive components

that require low capacitance from ESD and transient voltage events.

Excellent clamping capability, low capacitance, low leakage, and fast

response time, make these parts ideal for ESD protection on designs

where board space is at a premium. Because of its low capacitance, the

part is well suited for use in high speed data line applications.

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Automated Optical Inspection (AOI)

Compliant

Typical Applications

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

IEC 61000−4−2 (ESD)

Contact

Air

±16

±16

kV

Total Power Dissipation on FR−4 Board

Thermal Resistance, Junction−to−Ambient

313

400

mW

°C/W

Junction and Storage Temperature Range

−55 to +150

°C

Lead Solder Temperature − Maximum

(10 Second Duration)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See Application Note AND8308/D for further description of survivability specs.

Device

Package

ORDERING INFORMATION

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

ESDL2012MX4T5G

X4DFN2

(Pb−Free)

10000 /

Tape & Reel

X4DFN2

(0201)

CASE 152AX

MARKING

DIAGRAM

12

K

= Specific Device Code

M

= Date Code

X2DFNW2

CASE 717AB

XXM

XX

= Specific Device Code

M

= Date Code

SZESDL2012MX2WT5G

(In Development)

X2DFNW2

(Pb−Free)

8000 / Tape

& Reel