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TC7320 Datasheet(PDF) 3 Page - Supertex, Inc |
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TC7320 Datasheet(HTML) 3 Page - Supertex, Inc |
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3 / 5 page ![]() TC7320 A080405 3 P-Channel Electrical Characteristics (at T A=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage -200 V VGS=0V, ID=-1mA VGS(th) Gate Threshold Voltage -2.3 V VGS=VDS, ID=-1mA ∆V GS(th) Change in VGS(th) with Temperature 4.5 mV/°C VGS=VDS, ID=-1mA RGS Gate-Source Shunt Resistor 0.9 8.0 K Ω IGS=-100µA ∆R GS Change in RGS with Temperature TBD %/°C IGS=-100µA VzGS Gate-Source Zener Voltage 10 18 V IGS=-2.0mA ∆V GS(th) Change in VzGS with Temperature TBD mV/°C IGS=-2.0mA -10 µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current -1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C ID(ON) On-State Drain Current -1.0 A VGS=-10V, VDS=-25V RDS(ON) Static Drain-to-Source ON-State Resistance 20 Ω VGS=-10V, ID=-150mA ∆R DS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=-10V, ID=-150mA GFS Forward Transconductance 150 mmho VDS=-25V, ID=-200mA CISS Input Capacitance 200 COSS Common Source Output Capacitance 100 CRSS Reverse Transfer Capacitance 35 pF VGS=0V, VDS=-25V f=1MHz td(ON) Turn-ON Delay Time 15 tr Rise Time 20 td(OFF) Turn-Off Delay Time 35 tf Fall Time 30 ns VDD=-25V, ID=-500mA RGEN=25 Ω VSD Diode Forward Voltage Drop -1.8 V VGS=0V, ISD=-0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=-0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. P-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTP UT 0V -10V 0V V DD t d(OFF) Input Output t r t f t d(ON) t (ON) t (OFF) 90% 10% 90% 10% 10% 90% |
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