STS1HNK60 datasheet(2/8 Pages) STMICROELECTRONICS

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STS1HNK60

2/8

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

600

VDGR

Drain-gate Voltage (RGS =20kΩ)

600

VGS

Gate- source Voltage

± 30

Drain Current (continuous) at TC = 25°C

0.3

Drain Current (continuous) at TC = 100°C

0.19

IDM ( )

Drain Current (pulsed)

1.2

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.016

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA, VGS = 0

600

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 30 V

±100

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

2.25

3.7

RDS(on)

Static Drain-source On

Resistance

VGS =10 V,ID = 0.5 A

8.5

Ω

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