AM2N7002FDWC6VR datasheet(4/8 Pages) AITSEMI

4 / 8 page

AiT Semiconductor Inc.

www.ait-ic.com

AM2N7002FDW

MOSFET

30V SMALL SIGNAL DUAL N-CHANNEL MOSFET

REV1.1

- OCT 2015 RELEASED, MAR 2016 UPDATED -

- 4 -

ELECTRICAL CHARACTERISTICS

TJ =25℃, unless Otherwise Specified

Parameter

Symbol

Conditions

Min.

Typ. Max.

Unit

STATIC

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

0.8

1.5

Gate–Body Leakage Current

IGSS

VDS=0V, VGS=±20V

±10

µA

Zero Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

1.0

µA

Drain–Source On–ResistanceNOTE3

RDS(on)

VGS=4V, ID=10mA

5.0

8.0

VGS=2.5V, ID=1mA

7.0

Diode Forward Voltage NOTE3

VSD

IS=200mA, VGS=0V

1.2

DYNAMIC

Total Gate Charge

VDS=25V, VGS=10V,

ID=0.22A

4.9

Gate-Source Charge

Qgs

2.1

Gate-Drain Charge

Qgd

0.6

Input Capacitance

Ciss

VDS=25V, VGS=0V,

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

2.0

Turn-On Delay Time

td(on)

VDD=5V, RL =500Ω,

VGES=5V,RG=10Ω

10.1

Turn-On Rise Time

7.3

Turn-Off Delay Time

td(off)

31.3

Turn-Off Fall Time

28.2

NOTE3: Pulse test; pulse width≤300µs, duty cycle≤2%.

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