SMBJ20D datasheet(3/5 Pages) VISHAY

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SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD

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Vishay General Semiconductor

Revision: 20-Jul-2020

Document Number: 87606

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Mounted on minimum recommended pad layout

(2) Mounted on 5.0 mm x 5.0 mm copper pad area

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 3 - Pulse Waveform

Fig. 4 - Typical Junction Capacitance

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Typical thermal resistance, junction to ambient

RθJA

(1)

125

°C/W

RθJA

(2)

100

Typical thermal resistance, junction to mount

RθJM

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

SMBJ5.0D-M3/H

0.096

750

7" diameter plastic tape and reel

SMBJ5.0D-M3/I

0.096

3200

13" diameter plastic tape and reel

0.1

100

1000

10 000

d -Pulse Width (μs)

0.2" x 0.2" (5.0 mm x 5.0 mm)

copper pad areas

100

025

100

125

150

J - Initial Temperature (°C)

100

150

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

p -Time (ms)

J = 25 °C

pulse width (t

d) is de ned

as the point where the peak

current decays to 50 % of I

PPM

r = 10 μs

Peak value I

PPM

Half value - I

PP/2

10/1000 μs waveform

as de ned by R.E.A.

100

1000

10000

110

100

WM - Reverse Stand-Off Voltage (V)

Measured at stand-off

voltage, V

Measured at zero bias

J = 25 °C

f = 1.0 MHz

Uni-Directional

Bi-Directional

SMBJ20D Datasheet(PDF) 3 Page - Vishay Siliconix

SMBJ20D Datasheet(HTML) 3 Page - Vishay Siliconix

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