2N4401 datasheet(4/10 Pages) ONSEMI

4 / 10 page

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width

≤ 300 μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Conditions

Min.

Max.

Unit

V(BR)CEO

Collector-Emitter Breakdown

Voltage(5)

IC = 1.0 mA, IB = 0

V(BR)CBO

Collector-Base Breakdown

Voltage

IC = 0.1 mA, IE = 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 0.1 mA, IC = 0

6.0

IBL

Base Cut-Off Current

VCE = 35 V, VEB = 0.4 V

0.1

μA

ICEX

Collector Cut-Off Current

VCE = 35 V, VEB = 0.4 V

0.1

μA

hFE

DC Current Gain(5)

IC = 0.1 mA, VCE = 1.0 V

IC = 1.0 mA, VCE = 1.0 V

IC = 10 mA, VCE = 1.0 V

IC = 150 mA, VCE = 1.0 V

100

300

IC = 500 mA, VCE = 2.0 V

VCE(sat)

Collector-Emitter Saturation

Voltage(5)

IC = 150 mA, IB = 15 mA

0.40

IC = 500 mA, IB = 50 mA

0.75

VBE(sat)

Base-Emitter Saturation Voltage(5)

IC = 150 mA, IB = 15 mA

0.75

0.95

IC = 500 mA, IB = 50 mA

1.20

Current Gain - Bandwidth Product

IC = 20 mA, VCE = 10 V,

f = 100 MHz

250

MHz

Ccb

Collector-Base Capacitance

VCB = 5.0 V, IE = 0,

f = 140 kHz

6.5

Ceb

Emitter-Base Capacitance

VBE = 0.5 V, IC = 0,

f = 140 kHz

hie

Input Impedance

IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz

1.0

15.0

hre

Voltage Feedback Ratio

IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz

0.1

8.0

x10-4

hfe

Small-Signal Current Gain

IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz

500

hoe

Output Admittance

IC = 1.0 mA, VCE = 10 V,

f = 1.0 kHz

1.0

μmhos

Delay Time

VCC = 30 V, VEB = 2 V,

IC = 150 mA, IB1 = 15 mA

Rise Time

Storage Time

VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA

225

Fall Time

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