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NJVMJD112G Datasheet(PDF) 3 Page - ON Semiconductor |
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NJVMJD112G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 11 page ![]() MJD112 (NPN), MJD117 (PNP) http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current Continuous Peak IC 2 4 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. |
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