FODM1007R2 datasheet(3/9 Pages) ONSEMI

3 / 9 page

FODM100x Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

INDIVIDUAL COMPONENT CHARACTERISTICS

Symbol

Parameter

Device

Test Conditions

Min

Typ

Max

Unit

EMITTER

Forward Voltage

All

IF = 50 mA

−

1.4

1.6

Reverse Current

All

VR = 4 V

−

DETECTOR

BVCEO

Breakdown Voltage

Collector to Emitter

All

IC = 1 mA, IF = 0

−

BVECO

Emitter to Collector

All

IE = 0.1 mA, IF = 0

−

ICEO

Collector Dark Current

All

VCE = 70 V, IF = 0

−

100

CCE

Capacitance

All

VCE = 0 V, f = 1 MHz

−

DC TRANSFER CHARACTERISTICS

Symbol

Parameter

Device

Test Conditions

Min

Typ

Max

Unit

CTR

DC Current Transfer Ratio

FODM1007

IF = 5 mA, VCE = 5 V

−

160

FODM1008

130

−

260

FODM1009

200

−

400

VCE(SAT)

Saturation Voltage

All

IF = 10 mA, IC = 1 mA

−

0.3

AC TRANSFER CHARACTERISTICS

Symbol

Parameter

Device

Test Conditions

Min

Typ

Max

Unit

Rise Time

(Non−Saturated)

All

IC = 2 mA, VCE = 5 V, RL = 100 W

−

5.7

18.0

Fall Time (Non−Saturated) All

IC = 2 mA, VCE = 5 V, RL = 100 W

−

8.5

18.0

ISOLATION CHARACTERISTICS

Symbol

Parameter

Device

Test Conditions

Min

Typ

Max

Unit

VISO

Steady State Isolation

Voltage

All

TA = 25°C, R.H. < 50%,

t =1.0 min., II−O ≤ 20 mA

5,000

−

VACRMS

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

FODM1007R2 Datasheet(PDF) 3 Page - ON Semiconductor

FODM1007R2 Datasheet(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL