SQJ110EP datasheet(2/6 Pages) VISHAY

2 / 6 page

SQJ110EP

www.vishay.com

Vishay Siliconix

S22-0113-Rev. A, 14-Feb-2022

Document Number: 63151

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing

c. Independent of operating temperature

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0, ID = 250 μA

100

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

2.7

3.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 100 V

μA

VGS = 0 V

VDS = 100 V, TJ = 125 °C

VGS = 0 V

VDS = 100 V, TJ = 175 °C

250

On-state drain current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 15 A

0.005

0.0063

VGS = 10 V

ID = 15 A, TJ = 125 °C

0.0130

VGS = 10 V

ID = 15 A, TJ = 175 °C

0.0166

Forward transconductance b

gfs

VDS = 15 V, ID = 20 A

130

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

4357

6100

Output capacitance

Coss

473

663

Reverse transfer capacitance

Crss

-30

Total gate charge c

VGS = 10 V

VDS = 50 V, ID = 15 A

-75

113

Gate-source charge c

Qgs

-20

Gate-drain charge c

Qgd

-15

Gate resistance

f = 1 MHz

0.5

0.9

1.40

Turn-on delay time c

td(on)

VDD = 50 V, RL = 3.33

≅ 15 A, VGEN = 10 V, Rg = 1 Ω

-16

Rise time c

-5

Turn-off delay time c

td(off)

-36

Fall time c

-6

Source-Drain Diode Ratings and Characteristics b

Pulsed current a

ISM

224

Forward voltage

VSD

IF = 15 A, VGS = 0 V

1.1

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs

-48

Body diode reverse recovery charge

Qrr

-83

166

Reverse recovery fall time

-33

Reverse recovery rise time

-15

Body diode peak reverse recovery

current

IRM(REC)

-3.0

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