SIR178DP datasheet(2/9 Pages) VISHAY

2 / 9 page

SiR178DP

www.vishay.com

Vishay Siliconix

S20-0381-Rev. A, 25-May-2020

Document Number: 77598

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

g. Pulse test; pulse width

 300 μs, duty cycle  2 %

h. Guaranteed by design, not subject to production testing



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

VDS temperature coefficient

V

DS/TJ

ID = 10 mA

mV/°C

VGS(th) temperature coefficient

V

GS(th)/TJ

ID = 250 μA

-4.4

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

0.6

1.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = -8 V / +12 V

± 150

Zero gate voltage drain current

IDSS

VDS = 20 V, VGS = 0 V

μA

VDS = 20 V, VGS = 0 V, TJ = 70 °C

On-state drain current a

ID(on)

VDS  10 V, VGS =10 V

Drain-source on-state resistance a

RDS(on)

VGS = 10 V, ID = 30 A

0.00031

0.0004



VGS = 4.5 V, ID = 30 A

0.00038

0.0005

VGS = 2.5 V, ID = 30 A

0.00074

0.0012

Forward transconductance a

gfs

VDS = 15 V, ID = 50 A

295

Dynamic b

Input capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

12 430

Output capacitance

Coss

4070

Reverse transfer capacitance

Crss

740

Total gate charge

VDS = 10 V, VGS = 10 V, ID = 20 A

207

310

VDS = 10 V, VGS = 4.5 V, ID = 20 A

143

Gate-source charge

Qgs

26.6

Gate-drain charge

Qgd

18.219

Output charge

Qoss

VDS = 10 V, VGS = 0 V

Gate resistance

f = 1 MHz

0.2

0.94

1.9



Turn-on delay time

td(on)

VDD = 10 V, RL = 1 , ID  10 A,

VGEN = 10 V, Rg = 1 

-17

Rise time

-10

Turn-off delay time

td(off)

170

Fall time

-14

Turn-on delay time

td(on)

VDD = 10 V, RL = 1 , ID  10 A,

VGEN = 4.5 V, Rg = 1 

-44

Rise time

130

Turn-off delay time

td(off)

128

260

Fall time

-39

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

TC = 25 °C

100

Pulse diode forward current

ISM

300

Body diode voltage

VSD

IS = 10 A, VGS = 0 V

0.7

1.1

Body diode reverse recovery time

trr

IF = 10 A, dI/dt = 100 A/μs,

TJ = 25 °C

-46

Body diode reverse recovery charge

Qrr

110

Reverse recovery fall time

-27

Reverse recovery rise time

-19

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