SIR4606DP datasheet(1/7 Pages) VISHAY

Part #	SIR4606DP

Description	N-Channel 60 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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SiR4606DP

www.vishay.com

Vishay Siliconix

S21-0898-Rev. A, 30-Aug-2021

1

Document Number: 63129

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET® Gen IV power MOSFET

• Tuned for the lowest RDS - Qoss FOM

• 100 % Rg and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Primary side switch

• Synchronous rectification

•DC/DC converter

• Motor drive switch

• Boost converter

• LED backlighting

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. TC = 25 °C

PRODUCT SUMMARY

VDS (V)

60

RDS(on) max. (

Ω) at VGS = 10 V

0.0185

RDS(on) max. (

Ω) at VGS = 7.5 V

0.0225

Qg typ. (nC)

6.9

ID (A) a, f

16

Configuration

Single

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiR4606DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

60

V

Gate-source voltage

VGS

± 20

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

16 a

A

TC = 70 °C

16 a

TA = 25 °C

10.5 b, c

TA = 70 °C

8.4 b, c

Pulsed drain current (t = 100 μs)

IDM

40

Continuous source-drain diode current

TC = 25 °C

IS

16 a

TA = 25 °C

2.6 b, c

Single pulse avalanche current

L = 0.1 mH

IAS

12

Single pulse avalanche energy

EAS

7.2

mJ

Maximum power dissipation

TC = 25 °C

PD

31.2

W

TC = 70 °C

20

TA = 25 °C

3.7 b, c

TA = 70 °C

2.4 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d, e

260

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