SIR670DP datasheet(3/13 Pages) VISHAY

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SiR670DP

www.vishay.com

Vishay Siliconix

S13-1384-Rev. A, 17-Jun-13

Document Number: 62863

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

120

150

DS - Drain-to-Source Voltage (V)

GS = 3 V

GS = 2 V

GS = 10 V thru 5 V

GS = 4 V

0.0020

0.0040

0.0060

0.0080

0.0100

0.0120

100

D - Drain Current (A)

GS = 4.5 V

GS = 6.0 V

GS = 10 V

g - Total Gate Charge (nC)

DS = 30 V

DS = 40 V

DS = 20 V

D = 10 A

100

120

0.0

1.0

2.0

3.0

4.0

5.0

6.0

GS - Gate-to-Source Voltage (V)

C = 25 °C

C = 125 °C

C = - 55 °C

700

1400

2100

2800

3500

DS - Drain-to-Source Voltage (V)

iss

oss

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0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

J - Junction Temperature (°C)

D = 20 A

GS = 10 V

GS = 4.5 V

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