Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Mar. 2018. Rev. 2.0

1/7

SW4N70L

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 18nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED,Charge, Adaptor

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F TO-251N

TO-252

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

202

mJ

E

AR

Repetitive avalanche energy

(note 1)

20

mJ

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

30

V/ns

dv/dt

Peak diode recovery dv/dt

(note 3)

20

V/ns

P

D

Total power dissipation (@T

20

125

114

W

0.16

1.0

0.9

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F TO-251N

TO-252

R

thjc

Thermal resistance, Junction to case

6.2

1.0

1.1

R

thja

Thermal resistance, Junction to ambient

54

86

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 4N70L

SW4N70L

TO-220F

TUBE

2

SW N 4N70L

SW4N70L

TO-251N

TUBE

3

SW D 4N70L

SW4N70L

TO-252

REEL

N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 4A

R

1

2

3

TO-220F

1

2

3

TO-251N

TO-252

1

2

3

1

2

3