FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC ITO--220AC,molded plastic

Terminals: Leads solderable per

MIL- STD-750,Method 2026

Polarity: As marked

Weight: 0.078ounces,2.24 grams

Mounting position: Any

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

830

840

850

860

880

8A0

UNITS

Maximum recurrent peak reverse voltage

30

40

50

60

80

100

V

Maximum RMS voltage

21

28

35

42

56

70

V

Maximum DC blocking voltage

30

40

50

60

80

100

V

Maximum average forw ard rectified current

(see fig.1)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum reverse current

Typical thermal resistance

(Note2)

Operating junction temperature range

Storage temperature range

- 55 ---- + 125

- 55 ---- + 150

Maximum instantaneous forw ard voltage

@ 8.0A (Note 1)

1.0

15.0

50.0

V

0.65

0.75

0.85

0.8

150.0

20

820

14

20

8.0

2.Thermal resistance junction to ambient

mA

NOTE: 1. Pulse test:300us pulse width,1% duty cy cle.

A

3

- 55 ---- +150

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 100 V

CURRENT: 8.0A

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

www.diode.co.kr

1.

SAMYANG ELECTRONICS

SAM YANG

1

2

PIN

0.405(10.27)

0.383(9.72)

0.191(4.85)

0.171(4.35)

0.060(1.52)

0.037(0.94)

0.027(0.69)

0.105(2.67)

0.095(2.41)

0.205(5.20)

0.195(4.95)

PIN1

PIN2

0.014(0.36)

0.022(0.55)

0.110(2.80)

0.100(2.54)

0.330(8.38)

0.350(8.89)

0.122(3.08)

0.131(3.39)

0.140(3.56)

0.130(3.30)

0.110(2.80)

0.100(2.54)

0.172(4.36)

0.188(4.77)

DIA

Dimensions in inches and(millimeters)

DIA

ITO-220AC

inch(mm)

MBRF820 --- MBRF8A0

MBRF

MBRF

MBRF

MBRF

MBRF

MBRF

MBRF