© 2006 California Micro Devices Corp. All rights reserved.

03/02/06

490 N. McCarthy Blvd., Milpitas, CA 95035-5112

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Tel: 408.263.3214

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Fax: 408.263.7846

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www.cmd.com

3

CM1430

Specifications

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: These parameters are guaranteed by design and characterization.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATING

UNITS

Storage Temperature Range

-65 to +150

°C

DC Power per Resistor

100

mW

DC Package Power Rating

500

mW

STANDARD OPERATING CONDITIONS

PARAMETER

RATING

UNITS

Operating Temperature Range

-40 to +85

°C

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R

Resistance

80

100

120

Ω

Total Channel Capacitance

At 2.5VDC Reverse

Bias, 1MHz, 30mVAC

14

17

22

pF

C

Capacitance C1

At 2.5VDC Reverse

Bias, 1MHz, 30mVAC

7

8.5

11

pF

Standoff Voltage

V

Diode Leakage Current (reverse bias)

0.1

1.0

μA

Signal Clamp Voltage

Positive Clamp

Negative Clamp

5.6

-1.5

6.8

-0.8

9.0

-0.4

V

V

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-883, Method

3015

b) Contact Discharge per IEC 61000-4-2 Level 4

Notes 2 and 3

±30

±15

kV

kV

Dynamic Resistance

Positive

Negative

2.3

0.9

Ω

Ω

Cut-off Frequency

Channel R = 100

Ω,

Channel C = 8.5pF

200

MHz