Note:

① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate；

●Thermal resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

②

-

-

4.5

°C/W

Thermal resistance, junction - ambient

-

-

45

°C/W

Soldering temperature, wavesoldering for

-

-

265

°C

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Drain-Source Breakdown

Voltage

-30

V

Gate Threshold Voltage

-1.00

-1.50

-2.00

V

Drain-Source Leakage Current

-1.0

uA

Gate- Source Leakage Current

±100

nA

Static Drain-source On

Resistance

4.3

5.5

mΩ

5.7

7.0

mΩ

Forward Transconductance

12

S

Source-drain voltage

Is=-20A

1.00

V

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Input capacitance

f = 1MHz

-

4646

-

pF

Output capacitance

-

617.8

-

Reverse transfer capacitance

-

601.2

-

℃)

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Total gate charge

-

83.6

-

nC

Gate - Source charge

-

18.7

-

Gate - Drain charge

-

9.50

-

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

2

www.sztuofeng.com

Feb 2022 V1.0

0.85

Body Diode Reverse Recovery

Time

di/dt=100A/µs

25

nS

Body Diode Reverse Recovery

Charge

di/dt=100A/µs

78

nC

TF050P03N