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TF20N06 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # TF20N06
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF20N06 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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TF
20N06
N-Channel Enhancement Mode Power MOSFET
General Features
●
VDS =60V,ID =20A
RDS(ON) <35mΩ @ VGS=10V
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high EAS
●
Excellent package for good heat dissipation
●
Special process technology for high ESD capability
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
20
A
Drain Current-Continuous(TC=100℃)
ID (100℃)
14
A
Pulsed Drain Current
IDM
60
A
Maximum Power Dissipation
PD
45
W
Derating factor
0.3
W/℃
Single pulse avalanche energy
(Note 5)
EAS
72
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N -CHANNEL ENHANCEMENT MODE POWER MOSFET
Fe ,2018 V1.1
1
D
G
S
TO-252
20N06
TFYWCP
MARKING
Equivalent Circuit
Y :year code W :week code
G
S
D
RDS(ON) <40mΩ @ VGS= 4.5V
www.sztuofeng.com


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