4-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
13
2
4
RF OUT
RF IN
GND
GND
MARKING - R1
RF3816
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 6GHz
• Cellular Basestation Amplifiers and
Transceivers
• Gain Stage or Driver Amplifiers for Linear and
Saturated Amplifiers
• Narrow and Broadband Commercial and
Military Radio Designs
The RF3816 is a high-performance InGaP/GaAs general
purpose RF and microwave gain block amplifier. This
50
Ω amplifier is based on a reliable HBT MMIC design,
providing unsurpassed performance for many small-sig-
nal applications. Designed with an external bias resistor,
the RF3816 provides high output power and high gain
over broad frequency range. This low-cost amplifier is
packaged in a thermally efficient, industry standard,
ceramic Micro-X package providing excellent ThetaJC
performance.
• Reliable, Low-Cost HBT Design
• 12.1dB Gain, +17.3dBm P1dB@1.0GHz
• High P1dB of +14.7dBm@6.0GHz
• Single 6V Power Supply Operation
•50
Ω I/O Matched
• Thermally-Efficient Package
RF3816
Cascadable Broadband GaAs MMIC Amplifier DC to
6GHz (Bulk: 25 piece increment)
RF3816SB
5-piece Sample Bag
RF3816SR
100-piece Reel
RF3816TR7
7” Reel (1,000 pieces)
RF3816PCBA-410 Evaluation Board
0
Rev A2 041013
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.070
sq.
45°
+ 1°
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
0.200 sq.
Typ
Package Style: Micro-X, 4-Pin, Ceramic
Proposed
NOT FOR NEW DESIGNS
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