AiT Semiconductor Inc.

www.ait-ic.com

AM1012

MOSFET

N-CHANNEL 1.8-V (G-S) MOSFET

REV1.0

- SEP 2015 RELEASED -

- 4 -

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

0.45

-

0.9

V

Gate-Body Leakage

-

±0.5

±1.0

μA

Zero Gate Voltage Drain Current

-

0.3

100

nA

-

-

5

μA

700

-

-

mA

Drain-Source On-State

-

0.41

0.70

Ω

-

0.53

0.85

-

0.70

1.25

-

1.0

-

S

-

0.8

1.2

V

Total Gate Charge

-

750

-

pC

Gate-Source Charge

-

75

-

Gate-Drain Charge

-

225

-

Turn-on Delay Time

-

5

-

ns

Rise Time

-

5

-

Turn-off Delay Time

-

25

-

Fall Time

-

11

-

NOTE3: Pulse test: pulse width ≤300us, duty cycle≤ 2%

NOTE4: Guaranteed by design, not subject to production testing.