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CEF02N6 Datasheet(PDF) 2 Page - Chino-Excel Technology

Part # CEF02N6
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CET [Chino-Excel Technology]
Direct Link  http://www.cetsemi.com
Logo CET - Chino-Excel Technology

CEF02N6 Datasheet(HTML) 2 Page - Chino-Excel Technology

  CEF02N6 Datasheet HTML 1Page - Chino-Excel Technology CEF02N6 Datasheet HTML 2Page - Chino-Excel Technology CEF02N6 Datasheet HTML 3Page - Chino-Excel Technology CEF02N6 Datasheet HTML 4Page - Chino-Excel Technology CEF02N6 Datasheet HTML 5Page - Chino-Excel Technology  
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ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V,ID = 250
µA
600
V
Zero Gate Voltage Drain Current
IDSS
VDS =600V, VGS =0V
25
µA
Gate-Body Leakage
IGSS
VGS =30V, VDS =0V
100 nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
VGS(th)
VDS =VGS,ID = 250
µA
24
V
Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID =1A
5.0
Ω
On-State Drain Current
ID(ON)
VGS = 10V, VDS =10V
1.2
A
S
Forward Transconductance
FS
g
VDS = 50V, ID =1A
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 300V,
ID =2A,
VGS =10V
RGEN=18
18
35
ns
ns
ns
ns
18
35
50
90
16
40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =480V, ID = 2A,
VGS =10V
20
25
nC
nC
nC
Fall Time
6-118
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
EAS
IAS
VDD =50V, L=60mH
A
mJ
Ω
RG=9.1
Ω
2
125
12
3.8
2
2
CEF02N6
6



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