STGP15M120F3 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown voltage

VGE = 0 V, IC = 2 mA

1200

VCE(sat)

Collector-emitter saturation voltage

VGE = 15 V, IC = 15 A

1.85

2.3

VGE = 15 V, IC = 15 A,

TJ = 125 °C

2.1

VGE = 15 V, IC = 30 A,

TJ = 175 °C

2.2

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500 μA

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

μA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

985

Coes

Output capacitance

118

Cres

Reverse transfer capacitance

Total gate charge

VCC = 960 V, IC = 15 A,

VGE = 0 to 15 V

(see Figure 23. Gate charge

test circuit)

Qge

Gate-emitter charge

Qgc

Gate-collector charge

Table 5. Switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 600 V, IC = 15 A,

VGE = 15 V, RG = 22 Ω,

(see Figure 22. Test circuit for

inductive load switching)

Current rise time

(di/dt)on

Turn-on current slope

1000

A/μs

td(off)

Turn-off delay time

122

Current fall time

163

Eon(1)

Turn-on switching energy

0.55

Eoff(2)

Turn-off switching energy

0.85

Ets

Total switching energy

1.4

STGP15M120F3

Electrical characteristics

DS11255 - Rev 3

page 3/15

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