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STTH60400HR Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH60400HR Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() Figure 7. Reverse recovery charges versus dIF/dt (typical values) 0 400 800 1200 1600 2000 2400 0 100 200 300 400 500 dIF /dt(A/µs) QRR(nC) VR = 320 V Tj = 125°C IF = IF(AV) Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0 100 200 300 400 500 dIF /dt(A/µs) Sfactor VR = 320 V Tj = 125°C IF = IF(AV) Figure 9. Relative variations of dynamic parameters versus junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 V R = 320 V Reference :Tj = 125 °C Tj(°C) IF = IF(AV) IRM SFACTOR QRR Figure 10. Transient peak forward voltage versus dIF/dt (typical values) 0 2 4 6 8 10 12 100 200 300 400 500 dIF /dt(A/µs) VFP(V) Tj = 125°C IF = IF(AV) Figure 11. Forward recovery time versus dIF/dt (typical values) 0 200 400 600 800 100 200 300 400 500 dIF /dt(A/µs) tFR(ns) IF=IF(AV) VFR=1.1 x VF max. Tj=125 °C Figure 12. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 1 10 100 1000 VR(V) C(pF) F=1 MHz VOSC=30 mVRMS Tj=25 °C STTH60400HR Characteristics (curves) DS11815 - Rev 3 page 5/11 |
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