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P0120002P Datasheet(PDF) 2 Page - Eudyna Devices Inc |
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P0120002P Datasheet(HTML) 2 Page - Eudyna Devices Inc |
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2 / 13 page ![]() Technical Note P0120002P 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Typical Characteristics Power Derating Curve Transfer Curve Power Derating Curve Transfer Curve 3 2 1 0 0 50 100 150 200 Tc (°C) 400 300 200 100 0 02 4 6 Vds (V) Vgs=0V -0.5V -1.0V -1.5V -2.0V ♦S-parameters (Typical Data) Tc=25°C, Vds=6V, Ids=100mA, Common Source, Zo=50Ω (Calibrated to device leads) 10.0 5.0 3.0 4.0 -0.2 -0 .4 S11 S22 1.2GHz 1.2GHz 2.4GHz 2.4GHz 10.0 5.0 3.0 4.0 -0.2 -0 .4 S11 S22 1.2GHz 1.2GHz 2.4GHz 2.4GHz Scale for |S12| 1.2GHz S21 1.2GHz 2.4GHz 2.4GHz 0 -180 S12 0.02 0.04 0.06 0 0 2.0 4.0 6.0 Scale for |S12| 1.2GHz S21 1.2GHz 2.4GHz 2.4GHz 0 -180 S12 0.02 0.04 0.06 0 0 2.0 4.0 6.0 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp -2- Web Site: www.sei.co.jp/GaAsIC/ |
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