Table 7. Output power, power gain and drain efficiency vs input power (f= 860 MHz, pulsed CW)

PIN (dBm)

POUT (dBm)

POUT (W)

IDS (A)

GPS (dB)

ƞD (%)

42.0

34.2

16.0

2.6

18.8

21.7

43.3

34.9

21.6

3.1

19.1

25.1

44.7

35.6

29.5

3.6

19.5

29.4

46.0

36.2

39.5

4.2

19.7

33.8

47.2

36.8

52.5

4.8

20.0

38.9

48.7

37.6

73.5

5.7

20.2

46.0

49.9

38.2

96.6

6.6

20.4

52.7

51.0

38.8

126.3

7.5

20.5

60.1

52.0

39.3

158.5

8.5

20.3

66.8

52.5

39.6

179.8

9.1

19.7

70.6

52.8

39.8

190.6

9.6

18.9

71.1

52.9

40.0

195.7

10.1

17.9

69.2

53.0

40.1

197.8

10.3

17.4

68.3

Figure 2. Power gain and drain efficiency versus output power (f = 860 MHz, pulsed CW)

GADG160320200938SA

GADG250620201120SA

Output power (W)

η

D

GPS

0

15

30

45

60

75

90

16

17

18

19

20

21

22

0

20

40

60

80

100

120

140

160

180

200

220

Note:

VDD= 28 V, IDQ= 100 mA pulsed CW; pulse width = 100 μs, duty cycle = 10%.

RF2L15200CB4

Typical performances

DS13389 - Rev 2

page 5/13