RF3L05200CB4 datasheet(3/12 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

μA

VGS = 0 V, VDS = 75 V

IGSS

Gate-source leakage current

VGS = -8/10 V, VDS = 0 V

±100

VGS(th)

Gate threshold voltage

VDS = 42 V, ID = 600 µA

1.75

2.50

VGS(Q)

Gate quiescent voltage

VDS = 28 V, ID = 500 mA

2.9

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 1 A

275

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 100 mV

CISS

Common source input

capacitance

VGS = 0 V, VDD = 28 V, f = 1 MHz

106

CRSS

Common source feedback

capacitance

1.6

COSS

Common source output

capacitance

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Frequency

1000

MHz

POUT

Output power

f = 650 MHz, 2.5 dB compression

200

GPS

Power gain

ηD

Drain efficiency

VSWR

Load mismatch

POUT = 200 W, all phases

10:1

Note:

VDD = 28 V, IDQ = 100 mA, CW test signal.

RF3L05200CB4

Electrical characteristics

DS13359 - Rev 2

page 3/12

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