2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

90

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

1

μA

VGS = 0 V, VDS = 75 V

1

IGSS

Gate-source leakage current

VGS = -8/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, ID = 600 µA

1.75

2.50

V

VGS(Q)

Gate quiescent voltage

VDS = 1 V, ID = 1 A

2

4

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 5 A

800

mV

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 100 mV

1

Ω

CISS

Common source input

capacitance

VGS = 0 V, VDD = 28 V, f = 1 MHz

187

pF

CRSS

Common source feedback

capacitance

4.6

pF

COSS

Common source output

capacitance

79

pF

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

1000

MHz

POUT

Output power

f = 108 MHz, 5 dB compression

400

W

GPS

Power gain

15

dB

ηD

Drain efficiency

75

%

VSWR

Load mismatch

POUT = 400 W, pulsed CW,

all phases

10:1

Note:

VDD = 28 V, IDQ = 200 mA, pulsed CW, pulse width = 100 μs, duty cycle = 10%.

RF3L05400CB4

Electrical characteristics

DS13361 - Rev 2

page 3/12