D4E

3

1

2

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF5L051K4CB4

108 MHz

50 V

1400 W

20.5 dB

78%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Large positive and negative gate-source voltage range for improved class C

operation

•

On chip RC network enable high stability and ruggedness

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

30-88 MHz/136-174 MHz ground communication

•

1.6-30 MHz HF transceiver

•

Plasma generator

•

Particle accelerator

•

FM and VHF TV broadcast

Description

The RF5L051K4CB4 is a 1400 W, 50 V, high performance, unmatched LDMOS FET,

designed for wideband commercial and industrial applications in the frequency range

from HF to 500 MHz. It can be used for both CW and pulse application. It is featured

for high power and high ruggedness, suitable for industrial, scientific and medical

application, as well as FM radio, VHF TV and aerospace applications.

Product status link

RF5L051K4CB4

Product summary

Order code

RF5L051K4CB4

Marking

5L051K4

Package

D4E

Packing

Tray

Base/bulk quantity

20/100

1400 W, 50 V, HF to 500 MHz RF power LDMOS transistor

RF5L051K4CB4

Datasheet

DS13745 - Rev 2 - October 2021

For further information contact your local STMicroelectronics sales office.

www.st.com