B4E

1

2

3

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF5L08350CB4

860 MHz

50 V

400 W

19 dB

61%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched for ease of use

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the European Directive 2002/95/EC

Applications

•

Wideband lab amplifier from 0.4 to 1 GHz

•

Digital UHF TV 470-860 MHz

•

650 MHz particle accelerator

•

915 MHz RF energy applications

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS

FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Product status link

RF5L08350CB4

Product summary

Order code

RF5L08350CB4

Marking

5L08350

Package

B4E

Packing

Tape and reel 13"

Base/bulk quantity

120/120

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

RF5L08350CB4

Datasheet

DS13248 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com