ST50V10100 datasheet(3/7 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC= 25 °C unless otherwise specified).

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS= 0 V, ID= 100 μA

110

IDSS

Zero-gate voltage drain current

VGS= 0 V, VDS= 50 V

µA

IGSS

Gate-body leakage current

VDS= 0 V, VGS= 6 V

µA

VGS(th)

Gate threshold voltage

VDS= 50 V, ID= 600 µA

TBD

VDS(on)

Static drain-source on-resistance

VGS= 10 V, ID= 5 A

1.4

Ciss

Common source input

capacitance

VGS= 0 V, VDD= 50 V, f = 1 MHz

118

Coss

Common source output

capacitance

Crss

Common source feedback

capacitance

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD= 28 V, IDQ = 0.1 A,

f = 915 MHz

100

Gain

Power gain

Efficiency

Drain efficiency

IMD3

3rd order intermodulation

TBD

dBc

VSWR

Load mismatch

@ POUT = 100 W all phases

10:1

Table 6. Impedance data

Frequency (MHz)

Input impedance ZIN

Drain load impedance ZDL

100

TBD

250

500

750

1000

1250

1500

ST50V10100

Electrical characteristics

DS12763 - Rev 2

page 3/7

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